2010. 6. 17 1/3 semiconductor technical data ktc4520f triple diffused npn transistor revision no : 1 switching regulator application. high voltage switching application. features h excellent switching times. : t on =0.5 s(max.), t f =0.3 s(max.), at i c =2a. h high collector voltage : v ceo =500v. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 500 v emitter-base voltage v ebo 7 v collector current dc i c 3 a pulse i cp 6 base current i b 1 a collector power dissipation (tc=25 ? ) p c 30 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =500v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter sustaning voltage v cex(sus) i c =1.5a, i b1 =-i b2 =0.6a l=2mh, clamped 500 - - v collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =0.3a - - 1 v base-emitter saturation voltage v be(sat) i c =1.5a, i b =0.3a - - 1.5 v dc current gain h fe (1) (note) v ce =5v, i c =0.3a 15 - 50 h fe (2) v ce =5v, i c =1.5a 8 - - collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 50 - pf transition frequency f t v ce =10v, i c =0.3a - 18 - mhz switching time turn on time t on - - 0.5 s storage time t stg - - 3 fall time t f - - 0.3 note : h fe (1) classification r:15 q 30, o:20 q 40, y:30 q 50
2010. 6. 17 2/3 ktc4520f revision no : 1
2010. 6. 17 3/3 ktc4520f revision no : 1
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